列印頁面
VEMT3700F-GS08
Phototransistor, Silicon, NPN, 940 nm, 120 °, 100 mW, 2 Pins, PLCC
產品總覽
VEMT3700F-GS08 is a VEMT3700F high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package. The integrated daylight blocking filter is matched to 950nm IR emitters. Application includes photo interrupters, miniature switches, counters, encoders, position sensors.
- Surface mount package type, high radiant sensitivity
- Fast response times, package notch indicates collector
- Wavelength of peak sensitivity is 940nm (typ, Tamb = 25°C)
- Daylight blocking filter matched with 870nm to 950nm emitters
- Collector emitter breakdown voltage is 70V (min, IC = 1mA)
- Rise time, fall time is 6μs (typ, VS = 5V, IC = 1mA, λ = 950nm, RL = 1Kohm)
- Cut-off frequency is 180KHz (typ, VS = 5V, IC = 2mA, RL = 100 ohm)
- Dimension (L x W x H) is 0.13inch x 0.11inch x 0.06inch
- Operating temperature range from -40 to + 100°C
技術規格
Wavelength Typ
940nm
Power Consumption
100mW
Transistor Case Style
PLCC
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Viewing Angle
120°
No. of Pins
2Pins
Product Range
-
MSL
MSL 3 - 168 hours
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Philippines
承擔產品生產最後程序之國家
關稅編號：85414900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (07-Nov-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000095