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BPW17N
Phototransistor, 825 nm, 12 °, 100 mW, 2 Pins, T-3/4 (1.8mm)
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5916 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$26.150 |
| 10+ | NT$16.220 |
| 25+ | NT$15.080 |
| 50+ | NT$13.940 |
| 100+ | NT$12.800 |
| 500+ | NT$10.810 |
價格Each
最少: 1
多項: 1
NT$26.15
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品總覽
- Leaded silicon NPN phototransistor in clear, T-3/4 plastic package with lens
- Dimension is Ø 1.8mm
- High photo sensitivity and high radiant sensitivity
- Suitable for visible and near infrared radiation
- Fast response times
- Angle of half sensitivity is ϕ ± 12°
- Used as detector in electronic control and drive circuits
- 1.0mA collector light current at Ee = 1mW/cm2, λ = 950nm, VCE = 5V
- Wavelength of peak sensitivity is 825nm
技術規格
Wavelength Typ
825nm
Power Consumption
100mW
Transistor Case Style
T-3/4 (1.8mm)
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Viewing Angle
12°
No. of Pins
2Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85414900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (07-Nov-2024)
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產品合規憑證
重量 (公斤)：.000151