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| 數量 | 價格 |
|---|---|
| 1+ | NT$107.910 |
| 10+ | NT$85.600 |
| 25+ | NT$78.810 |
| 50+ | NT$76.230 |
| 100+ | NT$73.640 |
| 250+ | NT$69.440 |
| 500+ | NT$68.140 |
| 1000+ | NT$65.560 |
價格Each
最少: 1
多項: 1
NT$107.91
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僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IRS2001PBF复制
製造商標準前置時間52 週
訂購代碼1603665
其他名稱SP001542642
技術資料表
No. of Channels2Channels
Gate Driver Type-
Driver ConfigurationHigh Side and Low Side
Power Switch TypeIGBT, MOSFET
No. of Pins8Pins
IC Case / PackageDIP
IC MountingThrough Hole
Input TypeNon-Inverting
Source Current290mA
Sink Current600mA
Supply Voltage Min10V
Supply Voltage Max20V
Operating Temperature Min-40°C
Operating Temperature Max125°C
Input Delay160ns
Output Delay150ns
Product Range-
Qualification-
MSL-
產品總覽
IRS2001PBF is a high voltage, high speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200V.
- Floating channel designed for bootstrap operation
- Fully operational to +200V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10V to 20V
- Undervoltage lockout, matched propagation delay for both channels
- Outputs in phase with inputs
- Low-side output voltage is -0.3V (minimum)
- Turn-on propagation delay is 160ns (typ, VS = 0V, TA = 25°C)
- Offset supply leakage current is 50µA maximum, VIN = 0V or 5V, TA = 25°C)
- 8 lead PDIP, ambient temperature range from -40 to 125°C
技術規格
No. of Channels
2Channels
Driver Configuration
High Side and Low Side
No. of Pins
8Pins
IC Mounting
Through Hole
Source Current
290mA
Supply Voltage Min
10V
Operating Temperature Min
-40°C
Input Delay
160ns
Product Range
-
MSL
-
Gate Driver Type
-
Power Switch Type
IGBT, MOSFET
IC Case / Package
DIP
Input Type
Non-Inverting
Sink Current
600mA
Supply Voltage Max
20V
Operating Temperature Max
125°C
Output Delay
150ns
Qualification
-
相關產品
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法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
關稅編號:85423990
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
下載產品合規憑證
產品合規憑證
重量 (公斤):.000998
